Ion Implantation practice problems
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Read the Ion implantation class notes.

Phosphorus is implanted into a silicon wafer that has a background doping of 1x10¹⁴ cm^–3.

The implant energy is 70 keV. (See the notes for range and straggle plots.)

There is no anneal following the implant.

Determine the dose needed to so that the implanted profile has a peak concentration of N_P = 4x10¹⁷ cm^–3.
Then calculate the corresponding junction depth(s).

Answer